Christopher Broderick

NM02–Electronic structure of lonsdaleite SiGe alloys

Broderick C. A.

Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, SixGe1-x alloys grown in the lonsdaleite (“hexagonal diamond”) phase have recently emerged as a promising direct gap, Si-compatible material system, with experimental measurements demonstrating strong room temperature photoluminescence. When grown in the lonsdaleite phase, […]