Detectors

D01–Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors

Vallone M., Goano M., Tibaldi A., Hanna S., Eich D., Sieck A., Figgemeier F., Ghione G., Bertazzi F.

We present three-dimensional simulations of HgCdTe-based focal plane arrays (FPAs) with two-color and dual-band sequential infrared pixels having realistic truncated-pyramid shape taking into account the presence of compositionally-graded transition layers. Simulations emphasize the importance of a full-wave approach to the electromagnetic problem, and the evaluations of the optical and diffusive contribution to inter-pixel crosstalk indicate […]

183

D02–Photon Detection Efficiency simulation of InGaAs/InP SPAD

Signorelli F., Telesca F., Tosi A.

We present a comprehensive simulation flow for the estimation of photon detection efficiency as a function of wavelength in InGaAs/InP single-photon avalanche diodes (SPADs) at low temperature. We introduce a joint modelling of electrical and optical properties for SPAD detectors. We also highlight how accurately different parameters have to be calibrated in order to achieve […]

246

D03–Numerical Optimization of Quantum Cascade Detector Heterostructures

Popp J., Haider M., Franckie M., Faist J., Jirauschek C.

We demonstrate a Bayesian optimization framework for quantum cascade (QC) devices in the mid-infrared (mid-IR) and terahertz (THz) regime. The optimization algorithm is based on Gaussian process regression (GPR) and the devices are evaluated using a perturbed rate equation approach based on scattering rates calculated self-consistently by Fermi’s golden rule or alternatively extracted from an […]

D04– Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation

Konstantinou D., Caillaud C., Shivan T., Rommel S., Johannsen U., Blache F., Mallecot F., Krozer V., Tafur Monroy I.

This work introduces a subsystem level cosimulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent circuit of uni-traveling carrier photodiodes based on reflection coefficient measurements are analyzed. The optoelectronic lumped equivalent is co-integrated with a transimpedance amplifier design synthesized by high speed transistors. […]

D05–Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors

Palmieri A., Shafiee A., Alasio M. G. C., Tibaldi A., Ghione G., Bertazzi F., Goano M., Vallone M.

This work discusses coupled three-dimensional electromagnetic and electrical simulations of a Ge-on-Si waveguide photodetector where light is fed through a lateral waveguide. The numerical results show that this coupling solution leads to more uniform photon and carrier distributions along the Ge absorber compared to a conventional butt-coupled detector, allowing a broader electrooptical bandwidth for high […]

106

D06–Scaling Effects on the Plasmonic Enhancement of Butt-Coupled Waveguide Photodetectors

Ding Q., Sant S., Schenk A.

We employed 3D opto-electrical simulations to study the scaling effects of a plasmonic structure on the optical performance of butt-coupled waveguide photodetectors by placing an Ag stripe on top of the intrinsic region. It is found that cut-offs which are limited by carrier drift in the high-field region of the non-plasmonic device improve with longer […]

101

D07–Numerical simulation on the dependence of carrier transport characteristics on the thickness of the absorbing layer for GaAs-based blocked impurity band (BIB) terahertz detectors

Wang X., Chen Yulu, Wang B., Zhang C., Chen X., Zhang H.

The dependence of carrier transport characteristics on the thickness of the absorbing layer for Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector has been investigated in detail. It is found that responsivity linearly increases with the increased thickness of absorbing layer first, and after achieving a peak value, and then starts to dropping slowly.

D08–Numerical simulation on the effect of the thickness of the absorbing layer on the spectral response characteristics for GaAs-based blocked impurity band (BIB) terahertz detectors

Wang X., Chen Yulu, Wang B., Zhang C., Chen X., Zhang H.

The effect of the thickness of the absorbing layer on the spectral response characteristics for Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector has been investigated in detail. It is found that Response bandwidth (BWR) is approximately a linear function of hAbs, and the relationship between the Response bandwidth (BWR) and hAbs has been given in […]

D09–Efficient Absorption Enhancement Approaches for AlInAsSb Avalanche Photodiodes for 2-μm Applications

Chen Dekang, Sun K., Jones A. H., Campbell J. C.

We describe two photon-trapping structures to enhance the quantum efficiency of AlInAsSb APDs for 2-μm detection. Finite-difference time-domain (FDTD) simulations show the absorption can be enhanced by more than 100 % with a triangular lattice photonic crystal, and nearly 400 % by applying a metal grating, for normal incidence at 2 µm.

Detectors

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