D04– Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation

This work introduces a subsystem level cosimulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent circuit of uni-traveling carrier photodiodes based on reflection coefficient measurements are analyzed. The optoelectronic lumped equivalent is co-integrated with a transimpedance amplifier design synthesized by high speed transistors. The proposed broadband component achieves competitive performance characteristics exhibiting high gain.