MM03–Comparison of Scharfetter-Gummel Schemes for (Non-)Degenerate Semiconductor Device Simulation

We consider Voronoi finite volume schemes for the discretization of the van Roosbroeck system and pay particular attention to the choice of flux approximations. The classical Scharfetter-Gummel scheme yields a thermodynamically consistent numerical flux, but cannot be used for general charge carrier statistics.We compare and analyze aspects of two state-of-the-art modified Scharfetter-Gummel schemes to simulate (non-) degenerate semiconductors.