Fuhrmann J.

Weierstrass Institute for Applied Analysis and Stochastics, Berlin, Germany


MM03–Comparison of Scharfetter-Gummel Schemes for (Non-)Degenerate Semiconductor Device Simulation

Abdel D., Fuhrmann J., Farrell P.

We consider Voronoi finite volume schemes for the discretization of the van Roosbroeck system and pay particular attention to the choice of flux approximations. The classical Scharfetter-Gummel scheme yields a thermodynamically consistent numerical flux, but cannot be used for general charge carrier statistics.We compare and analyze aspects of two state-of-the-art modified Scharfetter-Gummel schemes to simulate […]

SC08–The lateral photovoltage scanning method (LPS): Understanding doping variations in silicon crystals

Kayser S., Rotundo N., Fuhrmann J., Dropka N., Farrell P.

The lateral photovoltage scanning method (LPS) can be used to detect undesired impurities which appear in silicon crystals during growth. Our goal is to make a digital twin of the LPS method. To this end, we replace inflexible blackbox code with a physics preserving finite volume discretization, confirming three theoretical results via a new simulation […]