Presentations

Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, SixGe1-x alloys grown in the lonsdaleite (“hexagonal diamond”) phase have recently emerged as a promising direct gap, Si-compatible material system, with experimental measurements demonstrating strong room temperature photoluminescence. When grown in the lonsdaleite phase, […]

The emergence of a direct band gap in Ge1-xSnx alloys has stimulated interest in developing Ge1-xSnx alloys and nanostructures for applications in Si-compatible electronic and photonic devices. The direct band gap of Ge1-xSnx, combined with the strong band gap reduction associated with Sn incorporation, makes Ge1-xSnx a promising material system for the development of Si-compatible […]