N04–Silicon-Integrated Red-Light Optical Gain Medium Based on BGaAs/GaP Quantum Wells

In this study we present BGaAs/GaP quantum well (QW) structures integrated with GaP/Si virtual substrate as a promising structure for applications requiring red-light optical gain media. Gain spectra are computed based on an 8-band k · p model with an envelope function approximation and Fermi’s Golden Rule. An emission of red light of wavelengths from the range of 730-690 nm is predicted for the QWs with 10-35% BAs mole fraction and widths below the critical thickness.

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