HomeAuthorChen X.

Chen X.

Laboratory of Advanced Material, Fudan University, Shanghai, China

Presentations

NUSOD2020_D07
D07–Numerical simulation on the dependence of carrier transport characteristics on the thickness of the absorbing layer for GaAs-based blocked impurity band (BIB) terahertz detectors

D07–Numerical simulation on the dependence of carrier transport characteristics on the thickness of the absorbing layer for GaAs-based blocked impurity band (BIB) terahertz detectors

Wang X., Chen Yulu, Wang B., Zhang C., Chen X., Zhang H.

The dependence of carrier transport characteristics on the thickness of the absorbing layer for Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector has been investigated in detail. It is found that responsivity linearly increases with the increased thickness of absorbing layer first, and after achieving a peak value, and then starts to dropping slowly.
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NUSOD2020_D08
D08–Numerical simulation on the effect of the thickness of the absorbing layer on the spectral response characteristics for GaAs-based blocked impurity band (BIB) terahertz detectors

D08–Numerical simulation on the effect of the thickness of the absorbing layer on the spectral response characteristics for GaAs-based blocked impurity band (BIB) terahertz detectors

Wang X., Chen Yulu, Wang B., Zhang C., Chen X., Zhang H.

The effect of the thickness of the absorbing layer on the spectral response characteristics for Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector has been investigated in detail. It is found that Response bandwidth (BWR) is approximately a linear function of hAbs, and the relationship between the Response bandwidth (BWR) and hAbs has been given in […]
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