IS01–Scaled III-V optoelectronic devices on silicon
In the present talk we discuss the development of the epitaxial technique Template-Assisted Selective Epitaxy (TASE) and its application for the monolithic integration of scaled III-V active photonic devices on silicon. A unique advantage of TASE for silicon photonics applications is that it enables a truly local integration of III-V material at precisely defined positions, […]