NM04–Atomistic analysis of band-to-band tunnelling in direct-gap GeSn group-IV alloys
The emergence of a direct band gap in Ge1-xSnx alloys has stimulated interest in developing Ge1-xSnx alloys and nanostructures for applications in Si-compatible electronic and photonic devices. The direct band gap of Ge1-xSnx, combined with the strong band gap reduction associated with Sn incorporation, makes Ge1-xSnx a promising material system for the development of Si-compatible […]