Alasio M. G. C.

Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, Italy


D05–Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors

Palmieri A., Shafiee A., Alasio M. G. C., Tibaldi A., Ghione G., Bertazzi F., Goano M., Vallone M.

This work discusses coupled three-dimensional electromagnetic and electrical simulations of a Ge-on-Si waveguide photodetector where light is fed through a lateral waveguide. The numerical results show that this coupling solution leads to more uniform photon and carrier  distributions along the Ge absorber compared to a conventional butt-coupled detector, allowing a broader electrooptical bandwidth for high […]

LD04–Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach

Tibaldi A., Gullino A., Gonzalez Montoya J., Alasio M. G. C., Larsson A., Debernardi P., Goano M., Vallone M., Ghione G., Bellotti E., Bertazzi F.

In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green’s function formalism. The simulator is validated through a comparison with experimental results.