Gambaryan K. M.

Department of Physics of Semiconductor and Microelectronics, Yerevan state university, Yerevan, Armenia

Presentations

N02–Nucleation chronology and electronic properties of In(As,Sb,P) graded-composition quantum dots

Marquardt O., Boeck T., Trampert A., Gambaryan K. M.

We have studied nucleation process and electronic properties of graded-composition quantum dots(GCQDs) grown from In-As-Sb-P in the liquid phase for application in mid-infrared devices like photoresistors or photoconductive cells. The GCQD ensemble exhibits diameters of 10 – 120 nm and heights of 2 – 20 nm. Compositional grading is a typical feature of quantum dots […]