Cappelluti F.

Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy


SC01–Device level modeling of intermediate band quantum dot solar cells

Cappelluti F., Elsehrawy F., Tibaldi A.

Among many material candidates for next-generation solar cells, quantum dots offer unique opportunities. Aiming to maximally harness their nanoscale bandgap engineering, in this work we outline a multiscale, multiphysics modeling approach for the device level simulation of quantum dot solar cells. Examples of experimental validation are discussed, emphasizing the potential of light trapping techniques towards […]

SC05–Modeling of three-terminal heterojunction bipolar transistor solar cells

Giliberti G., Bonani F., Marti A., Cappelluti F.

Three-terminal solar cells exploiting the heterojunction bipolar transistor structure combine the advantages of independently connected tandem cell architectures – suboptimal gaps, high resilence to spectral variations and to radiation damage – with a simple monolithic structure, since they do not need tunnel junctions. In this work, we study this novel device concept by means of […]