Bonani F.

Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy

Presentations

SC05–Modeling of three-terminal heterojunction bipolar transistor solar cells

Giliberti G., Bonani F., Marti A., Cappelluti F.

Three-terminal solar cells exploiting the heterojunction bipolar transistor structure combine the advantages of independently connected tandem cell architectures – suboptimal gaps, high resilence to spectral variations and to radiation damage – with a simple monolithic structure, since they do not need tunnel junctions. In this work, we study this novel device concept by means of […]