Bellotti E.

Department of Electrical and Computer Engineering, Boston University, Boston, USA


LD04–Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach

Tibaldi A., Gullino A., Gonzalez Montoya J., Alasio M. G. C., Larsson A., Debernardi P., Goano M., Vallone M., Ghione G., Bellotti E., Bertazzi F.

In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green’s function formalism. The simulator is validated through a comparison with experimental results.