Schenk A.

Department of Information Technology and Electrical Engineering, ETH Zurich, Zurich, Switzerland


D06–Scaling Effects on the Plasmonic Enhancement of Butt-Coupled Waveguide Photodetectors

Ding Q., Sant S., Schenk A.

We employed 3D opto-electrical simulations to study the scaling effects of a plasmonic structure on the optical performance of butt-coupled waveguide photodetectors by placing an Ag stripe on top of the intrinsic region. It is found that cut-offs which are limited by carrier drift in the high-field region of the non-plasmonic device improve with longer […]

IS01–Scaled III-V optoelectronic devices on silicon

Tiwari P., Mauthe S., Vico Trivino N., Staudinger P., Scherrer M., Wen P., Caimi D., Sousa M., Schmid H., Ding Q., Schenk A., Moselund K. E.

In the present talk we discuss the development of the epitaxial technique Template-Assisted Selective Epitaxy (TASE) and its application for the monolithic integration of scaled III-V active photonic devices on silicon. A unique advantage of TASE for silicon photonics applications is that it enables a truly local integration of III-V material at precisely defined positions, […]