Gullino A.

Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy


LD03–Modulation response of VCSELs: a physics-based simulation approach

Gullino A., Tibaldi A., Bertazzi F., Goano M., Daubenschuz M., Michalzik R., Debernardi P.

A preliminary study of the dynamic behaviour of a GaAs/AlGaAs 850 nm VCSEL is presented, with the focus on the small-signal analysis and in particular on the optical amplitude modulation response. Simulations are performed with our in-house quantum-corrected one-dimensional drift-diffusion code D1ANA, updated to perform the AC analysis. The -3 dB cutoff frequency of the […]

LD04–Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach

Tibaldi A., Gullino A., Gonzalez Montoya J., Alasio M. G. C., Larsson A., Debernardi P., Goano M., Vallone M., Ghione G., Bellotti E., Bertazzi F.

In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green’s function formalism. The simulator is validated through a comparison with experimental results.